Interesting scientific research on 14481-08-4

When you point to this article, it is believed that you are also very interested in this compound(14481-08-4)Application In Synthesis of Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II) and due to space limitations, I can only present the most important information.

Application In Synthesis of Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II). The fused heterocycle is formed by combining a benzene ring with a single heterocycle, or two or more single heterocycles. Compound: Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II), is researched, Molecular C22H38NiO4, CAS is 14481-08-4, about Growth and stability of CVD Ni3N and ALD NiO dual layers. Author is Lindahl, Erik; Ottosson, Mikael; Carlsson, Jan-Otto.

Multilayers of combinations of NiO, Ni3N, and Ni were grown by ALD and CVD techniques at 250°. Layers of low thermodynamical stability were modified to reach the target structures. The Ni layers were formed by decomposition of metastable Ni3N layers, i.e., the Ni3N layers act as precursor for Ni film growth. This new reaction route enables production of Ni/NiO layer structures by chem. means for the first time. By choosing suitable low temperature annealing conditions like 180 °C in a 1 Torr hydrogen atm., good control of the interfaces is obtained. It is possible to grow multilayers which are ordered both with respect to each other, the substrate and the Ni films. For instance the following structure Ni (111)/NiO (111)/α-Al2O3 (00l) was grown. Moreover, another new reaction route is deposition of thin epitaxial seed layers of NiO (111) for subsequent growth of Ni3N at a high rate. Single phase Ni(111) films could then be obtained by decomposition at 350° of the Ni3N layers. The demonstrated reaction routes for film growth in the Ni-O-N system can also be applied in several similar systems.

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