Cai, Xiuyu published the artcileCurrent-Voltage Hysteresis and Memory Effects in Ambipolar Organic Thin Film Transistors Based on a Substituted Oligothiophene, Related Products of esters-buliding-blocks, the publication is Journal of Physical Chemistry C (2007), 111(1), 452-456, database is CAplus.
An ambipolar 5,5”’-bis(fluoroalkyl)quarterthiophene exhibits memory effects in thin film transistors. The memory effect is based on hysteresis in the transfer (ID-VG) characteristics that is apparently due to charge trapping. Hysteresis induced by gate-bias stress was exploited to study nonvolatile floating gate memory effects. The ON state retention time for this memory device is ∼70 min. The temperature dependence of the retention time revealed a trapping mechanism with a trapping activation energy of ∼400 meV.
Journal of Physical Chemistry C published new progress about 129301-40-2. 129301-40-2 belongs to esters-buliding-blocks, auxiliary class Trifluoromethyl,Fluoride,Aliphatic hydrocarbon chain,Ester,Ether, name is Methyl 2,2-difluoro-2-(1,1,2,2-tetrafluoro-2-(perfluorobutoxy)ethoxy)acetate, and the molecular formula is C9H3F15O4, Related Products of esters-buliding-blocks.
Referemce:
https://en.wikipedia.org/wiki/Ester,
Ester – an overview | ScienceDirect Topics