Most of the compounds have physiologically active properties, and their biological properties are often attributed to the heteroatoms contained in their molecules, and most of these heteroatoms also appear in cyclic structures. A Journal, Journal de Physique IV called Nickel thin films grown by MOCVD using Ni(dmg)2 as precursor, Author is Becht, M.; Gallus, J.; Hunziker, M.; Atamny, F.; Dahmen, K. -H., which mentions a compound: 14481-08-4, SMILESS is CC(C)(C1=O[Ni+2]2(O=C(C(C)(C)C)[CH-]1)O=C([CH-]C(C(C)(C)C)=O2)C(C)(C)C)C, Molecular C22H38NiO4, COA of Formula: C22H38NiO4.
The aim of this study was (i) to study alternatives to the very toxic Ni(CO)4, (ii) optimization of the parameters for Ni film growth, and (iii) characterization of the film morphol. The thermal behavior of the precursors bis(dimethylglyoximato)Ni(II), [Ni(dmg)2], bis(2,2,6,6-tetramethyl-3,5-heptandionato)Ni(II), [Ni(thd)2], N,N’-ethylenebis(2,4-pentanedioniminoato)Ni(II), [Ni(enacac)], and bis(2-amino-pent-2-en-4-onato)Ni(II), [Ni(apo)2] were studied in a model reactor. Also, the evaporation rates of these compounds were determined Metallic Ni films were obtained using Ni(dmg)2 as precursor. The deposition was carried out in a horizontal quartz reactor at reduced pressure in a H/He atm. The films were analyzed by profilometry, x-ray diffraction, at. force microscopy (AFM), four-point resistivity measurements and electron spectroscopy for chem. anal. (ESCA). Comparison of the AFM and ESCA data with the elec. resistances resulted in a two layer film model.
《Nickel thin films grown by MOCVD using Ni(dmg)2 as precursor》 provides a strategy for the preparation of materials with excellent comprehensive properties, which is conducive to broaden the application field of this compound(Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II))COA of Formula: C22H38NiO4.
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